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14th December, 2006, 10:41 PM
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| MIT demonstrates InGaAs transistors that could succeed silicon At this week’s IEEE International Electron Devices Meeting (IEDM) in San Francisco, CA, USA, the Massachusetts Institute of Technology (MIT) presented results on InGaAs-based high-electron mobility transistors (HEMTs) with thin InAlAs barrier layers that could succeed silicon in logic chips. Read more on the Front Page: http://www.aoaforums.com/frontpage/content/view/1480/2/      |
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