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Old 14th December, 2006, 10:41 PM
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MIT demonstrates InGaAs transistors that could succeed silicon

At this week’s IEEE International Electron Devices Meeting (IEDM) in San Francisco, CA, USA, the Massachusetts Institute of Technology (MIT) presented results on InGaAs-based high-electron mobility transistors (HEMTs) with thin InAlAs barrier layers that could succeed silicon in logic chips.

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