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| Device controls electron spin at room temperature In a breakthrough for applied physics, North Carolina State University researchers have developed a magnetic semiconductor memory device, using GaMnN thin films, which utilizes both the charge and spin of electrons at room temperature. This is a major breakthrough, as previous devices that used magnetic semiconductors (GaMnAs) and controlled electron spin were only functional at 100 K (or -173 Celsius). Read more on the Front Page: AOA - Device controls electron spin at room temperature
__________________ Avatar and sig graphic by Pitch. Subscribers! Ask about a custom graphic or avatar today! Gizmo Thermal Diode Mod and Direct-Die Water Block 8-Cheetah 18GiB U-2 SCSI MegaRAID Enterprise 1500/128MiB Samsung SyncMaster 955DF TTGI/Superflower TTS-520 PSU ![]() ![]() ![]() |
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| gamnn , magnetic , north carolina , room temperature , semiconductor , spin , thin film |
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